Product Description
N-channel enhancement mode MOSFET transistor in a SOT23 package, designed for low-power switching applications with low on-resistance.
Category
Semiconductors - Discrete - MOSFETs
Package
SOT23 (3 pins)
Applications
- Load switching
- PWM control
- Low-power DC-DC converters
- Battery management circuits
- General-purpose switching
Key Specifications
- Channel Type: N-Channel
- Drain-Source Voltage (VDS): 60V
- Gate-Source Voltage (VGS): ±20V
- Drain Current (ID): 2.6A
- On-Resistance (RDS-on): 3.5Ω @ VGS=10V
- Power Dissipation: 0.34W
Notes
Low RDS-on makes it suitable for battery-powered applications where efficiency is critical
ZXMN6A08E6TA
Technical Details
| Part Number | ZXMN6A08E6TA | |||
|---|---|---|---|---|
| Quantity | 414 | |||
| Lead time for more: 1-6 weeks | ||||
| Manufacturer | DIODES INCORPORATED | |||
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